IRFP260NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead, Lead Free

Peak Reflow Temperature (Cel) :

250

Case Connection :

DRAIN

JESD-609 Code :

e3

ECCN Code :

EAR99

Threshold Voltage :

4V

FET Type :

N-Channel

Mounting Type :

Through Hole

Radiation Hardening :

No

Package / Case :

TO-247-3

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

200V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Nominal Vgs :

4 V

REACH SVHC :

No SVHC

Fall Time (Typ) :

48 ns

Length :

15.875mm

Resistance :

40mOhm

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

300W Tc

Mount :

Through Hole

Current Rating :

50A

Pulsed Drain Current-Max (IDM) :

200A

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-247AC

Width :

5.3mm

Turn-Off Delay Time :

55 ns

Termination :

Through Hole

Number of Pins :

3

Transistor Application :

SWITCHING

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Published :

2004

Turn On Delay Time :

17 ns

Recovery Time :

402 ns

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Height :

20.2946mm

Gate Charge (Qg) (Max) @ Vgs :

234nC @ 10V

Number of Elements :

1

Continuous Drain Current (ID) :

50A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Avalanche Energy Rating (Eas) :

560 mJ

Transistor Element Material :

SILICON

Packaging :

Bulk

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

4057pF @ 25V

Power Dissipation :

300W

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

40m Ω @ 28A, 10V

Voltage - Rated DC :

200V

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

60ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

200V