IRFP254PBF
- Mfr.Part #
- IRFP254PBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 23A TO247-3
- Stock
- 1,558
- In Stock :
- 1,558
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 23A
- Mounting Type :
- Through Hole
- Weight :
- 38.000013g
- Min Operating Temperature :
- -55°C
- Input Capacitance :
- 2.7nF
- Package / Case :
- TO-247-3
- Factory Lead Time :
- 8 Weeks
- Max Operating Temperature :
- 150°C
- Length :
- 15.87mm
- Rise Time :
- 63ns
- Power Dissipation-Max :
- 190W Tc
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 140mOhm @ 14A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 250V
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 190W
- Radiation Hardening :
- No
- Width :
- 5.31mm
- Resistance :
- 140mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700pF @ 25V
- Turn On Delay Time :
- 15 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Recovery Time :
- 560 ns
- Nominal Vgs :
- 4 V
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Height :
- 20.7mm
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2011
- Number of Elements :
- 1
- Threshold Voltage :
- 4V
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 250V
- Turn-Off Delay Time :
- 74 ns
- REACH SVHC :
- Unknown
- Drain to Source Resistance :
- 140mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Rds On Max :
- 140 mΩ
- Supplier Device Package :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 50 ns
- Datasheets
- IRFP254PBF

N-Channel Tube 140mOhm @ 14A, 10V ±20V 2700pF @ 25V 140nC @ 10V 250V TO-247-3
IRFP254PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2700pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 250V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 250V.As a result of its turn-off delay time, which is 74 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 140mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFP254PBF Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 74 ns
single MOSFETs transistor is 140mOhm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)
IRFP254PBF Applications
There are a lot of Vishay Siliconix
IRFP254PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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