IRFP254
- Mfr.Part #
- IRFP254
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 23A TO247-3
- Stock
- 30,861
- In Stock :
- 30,861
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 190W Tc
- Continuous Drain Current (ID) :
- 23A
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Through Hole
- Height :
- 20.7mm
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 250V
- Rds On (Max) @ Id, Vgs :
- 140mOhm @ 14A, 10V
- Current Rating :
- 23A
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Power Dissipation :
- 190W
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700pF @ 25V
- Lead Free :
- Contains Lead
- Voltage - Rated DC :
- 250V
- Turn On Delay Time :
- 15 ns
- Weight :
- 38.000013g
- Drain to Source Resistance :
- 140mOhm
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Fall Time (Typ) :
- 50 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Supplier Device Package :
- TO-247-3
- Package / Case :
- TO-247-3
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 250V
- Input Capacitance :
- 2.7nF
- Rise Time :
- 63ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 74 ns
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Width :
- 5.31mm
- Published :
- 2016
- Length :
- 15.87mm
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Min Operating Temperature :
- -55°C
- Operating Temperature :
- -55°C~150°C TJ
- Rds On Max :
- 140 mΩ
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Number of Pins :
- 3
- Datasheets
- IRFP254

N-Channel Tube 140mOhm @ 14A, 10V ±20V 2700pF @ 25V 140nC @ 10V 250V TO-247-3
IRFP254 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 25V.This device conducts a continuous drain current (ID) of 23A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 74 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 140mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFP254 Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 74 ns
single MOSFETs transistor is 140mOhm
a 250V drain to source voltage (Vdss)
IRFP254 Applications
There are a lot of Vishay Siliconix
IRFP254 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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