IRFP251

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

120 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2000 pF @ 25 V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs (Max) :

±20V

FET Feature :

-

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Series :

-

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Power Dissipation (Max) :

180W (Tc)

DS Breakdown Voltage-Min :

150 V

FET Type :

N-Channel

Surface Mount :

No

Drain to Source Voltage (Vdss) :

150 V

Number of Terminals :

3

JEDEC-95 Code :

TO-247

RoHS :

Non-Compliant

Package / Case :

TO-247-3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSFM-T3

Qualification Status :

COMMERCIAL

Supplier Device Package :

TO-247

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e0

Rds On (Max) @ Id, Vgs :

85mOhm @ 17A, 10V

Mounting Type :

Through Hole

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.085 Ω

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

130 A

Package :

Bulk

Pbfree Code :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Reach Compliance Code :

Unknown

Terminal Finish :

TIN LEAD

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

33A (Tc)

Manufacturer :

Rochester Electronics LLC