IRFP250PBF
- Mfr.Part #
- IRFP250PBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 30A TO247-3
- Stock
- 6,103
- In Stock :
- 6,103
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 85mOhm
- Threshold Voltage :
- 4V
- Height :
- 20.7mm
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 30A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 200V
- Voltage - Rated DC :
- 200V
- Rise Time :
- 86ns
- Length :
- 15.87mm
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Width :
- 5.31mm
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 70 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Operating Temperature :
- 150°C
- Turn On Delay Time :
- 16 ns
- Lead Free :
- Lead Free
- Nominal Vgs :
- 4 V
- Current Rating :
- 30A
- Published :
- 1997
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Power Dissipation-Max :
- 190W Tc
- Rds On Max :
- 85 mΩ
- Weight :
- 38.000013g
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- REACH SVHC :
- Unknown
- Number of Elements :
- 1
- Fall Time (Typ) :
- 62 ns
- Resistance :
- 85mOhm
- Input Capacitance :
- 2.8nF
- Factory Lead Time :
- 8 Weeks
- Supplier Device Package :
- TO-247-3
- Package / Case :
- TO-247-3
- Rds On (Max) @ Id, Vgs :
- 85mOhm @ 18A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 200V
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Power Dissipation :
- 190W
- Datasheets
- IRFP250PBF

N-Channel Tube 85mOhm @ 18A, 10V ±20V 2800pF @ 25V 140nC @ 10V 200V TO-247-3
IRFP250PBF Overview
A device's maximum input capacitance is 2800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 85mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFP250PBF Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
single MOSFETs transistor is 85mOhm
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)
IRFP250PBF Applications
There are a lot of Vishay Siliconix
IRFP250PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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