IRFP250NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

30A

Number of Elements :

1

Recovery Time :

279 ns

Resistance :

75mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

200V

Termination :

Through Hole

Number of Pins :

3

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JEDEC-95 Code :

TO-247AC

Input Capacitance (Ciss) (Max) @ Vds :

2159pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Height :

20.2946mm

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

3

Power Dissipation-Max :

214W Tc

Element Configuration :

Single

Series :

HEXFET®

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Width :

5.3mm

Transistor Application :

SWITCHING

Dual Supply Voltage :

200V

Package / Case :

TO-247-3

Power Dissipation :

214W

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

250

Lead Free :

Contains Lead, Lead Free

Continuous Drain Current (ID) :

30A

Published :

2004

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Fall Time (Typ) :

33 ns

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

41 ns

Rise Time :

43ns

JESD-609 Code :

e3

Length :

15.875mm

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

75m Ω @ 18A, 10V

Voltage - Rated DC :

200V

Nominal Vgs :

4 V

Turn On Delay Time :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)