IRFP250MPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

2159pF @ 25V

Lead Free :

Lead Free

Width :

5.2mm

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-247AC

Turn On Delay Time :

14 ns

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Rise Time :

43ns

Number of Terminations :

3

Threshold Voltage :

4V

Terminal Finish :

MATTE TIN OVER NICKEL

Power Dissipation :

214W

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Turn-Off Delay Time :

41 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Power Dissipation-Max :

214W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

16.129mm

Resistance :

75mOhm

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Mounting Type :

Through Hole

Height :

21.1mm

Peak Reflow Temperature (Cel) :

250

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

Package / Case :

TO-247-3

Drain to Source Breakdown Voltage :

200V

Element Configuration :

Single

FET Type :

N-Channel

Fall Time (Typ) :

33 ns

Continuous Drain Current (ID) :

30A

Rds On (Max) @ Id, Vgs :

75m Ω @ 18A, 10V

Published :

2009

Vgs (Max) :

±20V

JESD-609 Code :

e3

Number of Elements :

1

Factory Lead Time :

12 Weeks