IRFP250

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

25 ns

Power Dissipation-Max :

180W Tc

Lead Free :

Lead Free

Pin Count :

3

Mounting Type :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Continuous Drain Current (ID) :

33A

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

85m Ω @ 16A, 10V

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Rise Time :

50ns

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

2850pF @ 25V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

158nC @ 10V

Drain to Source Breakdown Voltage :

200V

Transistor Application :

SWITCHING

Fall Time (Typ) :

40 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.085Ohm

JESD-609 Code :

e0

Current Rating :

33A

Avalanche Energy Rating (Eas) :

600 mJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-247-3

Packaging :

Tube

Mount :

Through Hole

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

132A

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage - Rated DC :

200V

Number of Terminations :

3

Base Part Number :

IRFP

Series :

PowerMESH™ II

Power Dissipation :

180W