IRFP245

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-247-3

Terminal Position :

Single

Drive Voltage (Max Rds On, Min Rds On) :

10V

Number of Terminals :

3

Manufacturer :

Rochester Electronics LLC

Pulsed Drain Current-Max (IDM) :

56 A

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Product Status :

Active

Supplier Device Package :

TO-247

Gate Charge (Qg) (Max) @ Vgs :

59 nC @ 10 V

Case Connection :

DRAIN

Surface Mount :

No

Qualification Status :

COMMERCIAL

JEDEC-95 Code :

TO-247

Drain to Source Voltage (Vdss) :

250 V

Rds On (Max) @ Id, Vgs :

340mOhm @ 10A, 10V

Avalanche Energy Rating (Eas) :

550 mJ

Current - Continuous Drain (Id) @ 25°C :

14A (Tc)

Vgs (Max) :

±20V

Package :

Bulk

DS Breakdown Voltage-Min :

250 V

RoHS :

Non-Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN LEAD

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

No

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

-

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Power Dissipation (Max) :

150W (Tc)

Series :

-

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.34 Ω

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

JESD-609 Code :

e0

Terminal Form :

THROUGH-HOLE