IRFP244

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.28Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

250V

Qualification Status :

COMMERCIAL

JESD-609 Code :

e0

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

550 mJ

Terminal Finish :

TIN LEAD

Surface Mount :

No

Pbfree Code :

No

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1.4pF @ 25V

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

280m Ω @ 9A, 10V

Power Dissipation-Max :

150W Tc

Drain Current-Max (Abs) (ID) :

15A

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

60A

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-247-3

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING