IRFP240
- Mfr.Part #
- IRFP240
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 20A TO247-3
- Stock
- 17,100
- In Stock :
- 17,100
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Contains Lead
- Current Rating :
- 20A
- Height :
- 20.7mm
- Drain to Source Breakdown Voltage :
- 200V
- Min Operating Temperature :
- -55°C
- Package / Case :
- TO-247-3
- Turn On Delay Time :
- 14 ns
- Width :
- 5.31mm
- Continuous Drain Current (ID) :
- 20A
- Element Configuration :
- Single
- Length :
- 15.87mm
- Packaging :
- Tube
- Weight :
- 38.000013g
- Rise Time :
- 51ns
- Power Dissipation :
- 150W
- Drain to Source Voltage (Vdss) :
- 200V
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Resistance :
- 180mOhm
- Mounting Type :
- Through Hole
- Number of Channels :
- 1
- Power Dissipation-Max :
- 150W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Voltage - Rated DC :
- 200V
- Input Capacitance :
- 1.3nF
- Rds On Max :
- 180 mΩ
- Rds On (Max) @ Id, Vgs :
- 180mOhm @ 12A, 10V
- Turn-Off Delay Time :
- 45 ns
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2016
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- RoHS Status :
- Non-RoHS Compliant
- Fall Time (Typ) :
- 36 ns
- Max Operating Temperature :
- 150°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- TO-247-3
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRFP240

N-Channel Tube 180mOhm @ 12A, 10V ±20V 1300pF @ 25V 70nC @ 10V 200V TO-247-3
IRFP240 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.This device has a drain-to-source resistance of 180mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFP240 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 180mOhm
a 200V drain to source voltage (Vdss)
IRFP240 Applications
There are a lot of Vishay Siliconix
IRFP240 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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