IRFP23N50LPBF
- Mfr.Part #
- IRFP23N50LPBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 23A TO247-3
- Stock
- 6,419
- In Stock :
- 6,419
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Nominal Vgs :
- 5 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Number of Channels :
- 1
- Turn On Delay Time :
- 26 ns
- Length :
- 15.87mm
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 235 mΩ
- Continuous Drain Current (ID) :
- 23A
- Weight :
- 38.000013g
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 235mOhm @ 14A, 10V
- REACH SVHC :
- Unknown
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 370W
- Mount :
- Through Hole
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 45 ns
- Number of Pins :
- 3
- Threshold Voltage :
- 5V
- Width :
- 5.31mm
- Power Dissipation-Max :
- 370W Tc
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-247-3
- Drain to Source Voltage (Vdss) :
- 500V
- Drain to Source Resistance :
- 190mOhm
- Turn-Off Delay Time :
- 53 ns
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance :
- 3.6nF
- Published :
- 2011
- Resistance :
- 235mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Package / Case :
- TO-247-3
- Height :
- 20.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 500V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Rise Time :
- 94ns
- Datasheets
- IRFP23N50LPBF

N-Channel Tube 235mOhm @ 14A, 10V ±30V 3600pF @ 25V 150nC @ 10V 500V TO-247-3
IRFP23N50LPBF Overview
A device's maximal input capacitance is 3600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 23A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 53 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 190mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 26 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFP23N50LPBF Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 190mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IRFP23N50LPBF Applications
There are a lot of Vishay Siliconix
IRFP23N50LPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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