IRFP22N60K

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

370W

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Input Capacitance :

3.57nF

Input Capacitance (Ciss) (Max) @ Vds :

3570pF @ 25V

FET Type :

N-Channel

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

280mOhm

Width :

5.31mm

Power Dissipation-Max :

370W Tc

Weight :

38.000013g

Height :

20.7mm

Drain to Source Breakdown Voltage :

600V

Rds On Max :

280 mΩ

Continuous Drain Current (ID) :

22A

Turn-Off Delay Time :

48 ns

Number of Pins :

3

Number of Channels :

1

Supplier Device Package :

TO-247-3

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

26 ns

Rds On (Max) @ Id, Vgs :

280mOhm @ 13A, 10V

Published :

2017

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Fall Time (Typ) :

37 ns

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-247-3

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Rise Time :

99ns

Packaging :

Tube

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Length :

15.87mm

Radiation Hardening :

No