IRFP22N50A

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Mfr.Part #
IRFP22N50A
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 22A TO247-3
Stock
3,526
In Stock :
3,526

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
15.87mm
Rds On (Max) @ Id, Vgs :
230mOhm @ 13A, 10V
Input Capacitance :
3.45nF
Operating Temperature :
-55°C~150°C TJ
Min Operating Temperature :
-55°C
Power Dissipation-Max :
277W Tc
Max Operating Temperature :
150°C
Turn On Delay Time :
26 ns
Number of Channels :
1
RoHS Status :
Non-RoHS Compliant
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
3450pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-247-3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
22A
Rise Time :
94ns
Rds On Max :
230 mΩ
Drain to Source Resistance :
230mOhm
Element Configuration :
Single
Number of Pins :
3
Mount :
Through Hole
Turn-Off Delay Time :
47 ns
FET Type :
N-Channel
Fall Time (Typ) :
47 ns
Supplier Device Package :
TO-247-3
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Width :
5.31mm
Vgs (Max) :
±30V
Gate to Source Voltage (Vgs) :
30V
Height :
20.7mm
Weight :
38.000013g
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Radiation Hardening :
No
Drain to Source Voltage (Vdss) :
500V
Published :
2017
Datasheets
IRFP22N50A
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFP22N50A from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Pins:3, IRFP22N50A pinout, IRFP22N50A datasheet PDF, IRFP22N50A amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFP22N50A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFP22N50A


N-Channel Tube 230mOhm @ 13A, 10V ±30V 3450pF @ 25V 120nC @ 10V 500V TO-247-3

IRFP22N50A Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3450pF @ 25V.This device conducts a continuous drain current (ID) of 22A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 47 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 230mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 26 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFP22N50A Features


a continuous drain current (ID) of 22A
the turn-off delay time is 47 ns
single MOSFETs transistor is 230mOhm
a 500V drain to source voltage (Vdss)


IRFP22N50A Applications


There are a lot of Vishay Siliconix
IRFP22N50A applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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