IRFP21N60LPBF
- Mfr.Part #
- IRFP21N60LPBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 21A TO247-3
- Stock
- 48,671
- In Stock :
- 48,671
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- TO-247-3
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 21A
- Drain to Source Voltage (Vdss) :
- 600V
- Rise Time :
- 58ns
- Turn On Delay Time :
- 20 ns
- Drain to Source Resistance :
- 320mOhm
- Rds On (Max) @ Id, Vgs :
- 320mOhm @ 13A, 10V
- Nominal Vgs :
- 5 V
- Number of Pins :
- 3
- Input Capacitance :
- 4nF
- Gate to Source Voltage (Vgs) :
- 30V
- Width :
- 5.31mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 330W Tc
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 150°C
- Package / Case :
- TO-247-3
- Number of Channels :
- 1
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 33 ns
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Height :
- 20.7mm
- Length :
- 15.87mm
- Fall Time (Typ) :
- 10 ns
- Drain to Source Breakdown Voltage :
- 600V
- Published :
- 2014
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Power Dissipation :
- 330W
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Weight :
- 38.000013g
- Factory Lead Time :
- 8 Weeks
- Rds On Max :
- 320 mΩ
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Threshold Voltage :
- 5V
- Datasheets
- IRFP21N60LPBF

N-Channel Tube 320mOhm @ 13A, 10V ±30V 4000pF @ 25V 150nC @ 10V 600V TO-247-3
IRFP21N60LPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 320mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFP21N60LPBF Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 320mOhm
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)
IRFP21N60LPBF Applications
There are a lot of Vishay Siliconix
IRFP21N60LPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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