IRFP17N50L
- Mfr.Part #
- IRFP17N50L
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO247-3
- Stock
- 4,503
- In Stock :
- 4,503
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Turn On Delay Time :
- 21 ns
- Drain to Source Voltage (Vdss) :
- 500V
- Length :
- 15.87mm
- Width :
- 5.31mm
- Rds On Max :
- 320 mΩ
- Input Capacitance :
- 2.76nF
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 16A
- Power Dissipation :
- 220W
- Weight :
- 38.000013g
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2760pF @ 25V
- Threshold Voltage :
- 5V
- Package / Case :
- TO-247-3
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 220W Tc
- Rise Time :
- 51ns
- Current Rating :
- 16A
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Resistance :
- 320mOhm
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mount :
- Through Hole
- Voltage - Rated DC :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Number of Pins :
- 3
- REACH SVHC :
- Unknown
- Drain to Source Breakdown Voltage :
- 500V
- Fall Time (Typ) :
- 28 ns
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 50 ns
- Supplier Device Package :
- TO-247-3
- Published :
- 2016
- Min Operating Temperature :
- -55°C
- Vgs (Max) :
- ±30V
- Nominal Vgs :
- 5 V
- Rds On (Max) @ Id, Vgs :
- 320mOhm @ 9.9A, 10V
- Height :
- 20.7mm
- Lead Free :
- Contains Lead
- Datasheets
- IRFP17N50L

N-Channel Tube 320mOhm @ 9.9A, 10V ±30V 2760pF @ 25V 130nC @ 10V 500V TO-247-3
IRFP17N50L Overview
A device's maximal input capacitance is 2760pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 16A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 320mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFP17N50L Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 320mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IRFP17N50L Applications
There are a lot of Vishay Siliconix
IRFP17N50L applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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