IRFP150N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Drain-source On Resistance-Max :

0.036Ohm

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Number of Elements :

1

Avalanche Energy Rating (Eas) :

420 mJ

Drain Current-Max (Abs) (ID) :

42A

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

140A

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Packaging :

Bulk

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED, FAST SWITCHING

DS Breakdown Voltage-Min :

100V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mounting Type :

Through Hole

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1998

Vgs (Max) :

±20V

Case Connection :

DRAIN

JEDEC-95 Code :

TO-247AC

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

36m Ω @ 23A, 10V

Power Dissipation-Max :

160W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V