IRFP150

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

100V

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

100V

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

2.8pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

No

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

FET Type :

N-Channel

Packaging :

Tube

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

40A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Drain-source On Resistance-Max :

0.055Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Terminal Finish :

TIN LEAD

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

160A

Rds On (Max) @ Id, Vgs :

55m Ω @ 25A, 10V

JESD-609 Code :

e0

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Surface Mount :

No

Power Dissipation-Max :

230W Tc