IRFP1405

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

530 mJ

Packaging :

Bulk

Package / Case :

TO-247-3

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0053Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain to Source Voltage (Vdss) :

55V

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 95A, 10V

Pulsed Drain Current-Max (IDM) :

640A

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

55V

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

95A

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Number of Terminations :

3

Power Dissipation-Max :

310W Tc

Published :

2003

Terminal Position :

Single

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

FET Type :

N-Channel

Series :

HEXFET®

ECCN Code :

EAR99

JEDEC-95 Code :

TO-247AC