IRFP064VPBF
- Mfr.Part #
- IRFP064VPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 130A TO247AC
- Stock
- 4,763
- In Stock :
- 4,763
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Input Capacitance :
- 6.76nF
- Number of Pins :
- 3
- Package / Case :
- TO-247-3
- Vgs (Max) :
- ±20V
- Published :
- 2004
- FET Type :
- N-Channel
- Rise Time :
- 200ns
- Rds On (Max) @ Id, Vgs :
- 5.5mOhm @ 78A, 10V
- Max Operating Temperature :
- 175°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 6760pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Packaging :
- Bulk
- Fall Time (Typ) :
- 150 ns
- Series :
- HEXFET®
- Nominal Vgs :
- 4 V
- Continuous Drain Current (ID) :
- 130A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 60V
- Power Dissipation-Max :
- 250W Tc
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Drain to Source Breakdown Voltage :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 130A
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 250W
- Element Configuration :
- Single
- Turn On Delay Time :
- 26 ns
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Rds On Max :
- 5.5 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 60V
- Supplier Device Package :
- TO-247AC
- Operating Temperature :
- -55°C~175°C TJ
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 100 ns
- Drain to Source Resistance :
- 5.5mOhm
- Datasheets
- IRFP064VPBF

N-Channel Bulk 5.5mOhm @ 78A, 10V ±20V 6760pF @ 25V 260nC @ 10V 60V TO-247-3
IRFP064VPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6760pF @ 25V.This device has a continuous drain current (ID) of [130A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.MOSFETs have 5.5mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 26 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFP064VPBF Features
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 5.5mOhm
a 60V drain to source voltage (Vdss)
IRFP064VPBF Applications
There are a lot of Infineon Technologies
IRFP064VPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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