IRFML8244TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 10V

Number of Elements :

1

Number of Terminations :

3

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Published :

2008

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

12 Weeks

Nominal Vgs :

1.7 V

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

25V

Fall Time (Typ) :

2.9 ns

Length :

3.04mm

Power Dissipation-Max :

1.25W Ta

Mounting Type :

Surface Mount

Height :

1.02mm

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Recovery Time :

17 ns

Terminal Position :

Dual

Rise Time :

2.1ns

Element Configuration :

Single

Turn-Off Delay Time :

9 ns

Pulsed Drain Current-Max (IDM) :

24A

Turn On Delay Time :

2.7 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.25W

Threshold Voltage :

1.7V

Resistance :

41mOhm

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 10V

Continuous Drain Current (ID) :

5.8A

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.35V @ 10μA

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Manufacturer Package Identifier :

Micro3

FET Type :

N-Channel

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Width :

1.4mm

Rds On (Max) @ Id, Vgs :

24m Ω @ 5.8A, 10V