IRFM460

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Case Connection :

Isolated

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 25V

Number of Terminations :

3

Vgs (Max) :

±20V

Published :

2015

Number of Elements :

1

ECCN Code :

EAR99

JESD-30 Code :

S-MSFM-P3

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

1200 mJ

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

250W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Terminal Form :

PIN/PEG

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.31Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

19A

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

500V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

76A

Drain to Source Voltage (Vdss) :

500V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

270m Ω @ 12A, 10V

Additional Feature :

High Reliability

Mounting Type :

Through Hole

Surface Mount :

No