IRFM120ATF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.7mm

Vgs (Max) :

±20V

Package / Case :

TO-261-4, TO-261AA

Turn-Off Delay Time :

36 ns

Drain to Source Breakdown Voltage :

100V

Number of Elements :

1

Number of Terminations :

4

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Fall Time (Typ) :

28 ns

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Power Dissipation :

2.4W

Element Configuration :

Single

Weight :

188mg

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2002

Power Dissipation-Max :

2.4W Ta

Width :

3.7mm

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Voltage - Rated DC :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Resistance :

200mOhm

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Factory Lead Time :

10 Weeks

Current Rating :

2.3A

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Turn On Delay Time :

14 ns

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Contact Plating :

Tin

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.15A, 10V

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

FET Type :

N-Channel

Radiation Hardening :

No

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2.3A

Length :

6.7mm

Rise Time :

14ns