IRFM120A
- Mfr.Part #
- IRFM120A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 71
- In Stock :
- 71
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 100V
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 28 ns
- Current Rating :
- 2.3A
- Turn-Off Delay Time :
- 36 ns
- Contact Plating :
- Tin
- Threshold Voltage :
- 4V
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 2.3A Ta
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Number of Terminations :
- 4
- Radiation Hardening :
- No
- Length :
- 6.7mm
- JESD-30 Code :
- R-PDSO-G4
- Power Dissipation-Max :
- 2.4W Ta
- Terminal Position :
- Dual
- Factory Lead Time :
- 10 Weeks
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Height :
- 1.7mm
- Weight :
- 188mg
- Voltage - Rated DC :
- 100V
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 1.15A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2002
- Turn On Delay Time :
- 14 ns
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3.7mm
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Power Dissipation :
- 2.4W
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Rise Time :
- 14ns
- Continuous Drain Current (ID) :
- 2.3A
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 480pF @ 25V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Resistance :
- 200mOhm
- Datasheets
- IRFM120A

N-Channel Tape & Reel (TR) 200m Ω @ 1.15A, 10V ±20V 480pF @ 25V 22nC @ 10V TO-261-4, TO-261AA
IRFM120ATF Description
IRFM120ATF is an N-channel Power MOSFET from the manufacturer of ON Semiconductor with a voltage of 100V. The operating temperature of IRFM120ATF is -55°C~150°C TJ and its maximum power dissipation are 2.4W. IRFM120ATF has 3 pins and it is available in TO-261-4 and TO-261AA packaging way. Turn On Delay Time of IRFM120ATF is 14 ns and the Turn-Off Delay Time is 36 ns.
IRFM120ATF Features
-
Avalanche Rugged Technology
-
Rugged Gate Oxide Technology
-
Lower Input Capacitance
-
Improved Gate Charge
-
Extended Safe Operating Area
-
Lower Leakage Current : 10 #A (Max.) @ VDS = 100V
-
Lower RDS(ON) : 0.155 ! (Typ.)
IRFM120ATF Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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