IRFM120ATF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

200mOhm

Package / Case :

TO-261-4, TO-261AA

Power Dissipation :

2.4W

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

3.7mm

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Element Configuration :

Single

Drain to Source Breakdown Voltage :

100V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Published :

2002

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

36 ns

Transistor Application :

SWITCHING

Voltage - Rated DC :

100V

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.15A, 10V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Rise Time :

14ns

Terminal Position :

Dual

Transistor Element Material :

SILICON

Factory Lead Time :

10 Weeks

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

2.3A

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.7mm

Number of Pins :

3

Fall Time (Typ) :

28 ns

JESD-30 Code :

R-PDSO-G4

Lead Free :

Lead Free

Current Rating :

2.3A

Length :

6.7mm

Pbfree Code :

yes

Weight :

188mg

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

14 ns

Mount :

Surface Mount

JESD-609 Code :

e3

Power Dissipation-Max :

2.4W Ta

Number of Terminations :

4

Threshold Voltage :

4V