IRFL9110TR
- Mfr.Part #
- IRFL9110TR
- Manufacturer
- Vishay
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 1.1A SOT223
- Stock
- 85,209
- In Stock :
- 85,209
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- -100V
- Supplier Device Package :
- SOT-223
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- Input Capacitance :
- 200pF
- Drain to Source Resistance :
- 1.2Ohm
- Width :
- 3.7mm
- Max Operating Temperature :
- 150°C
- Current - Continuous Drain (Id) @ 25°C :
- 1.1A Tc
- Weight :
- 250.212891mg
- Power Dissipation :
- 2W
- Height :
- 1.45mm
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 10 ns
- Power Dissipation-Max :
- 2W Ta 3.1W Tc
- Number of Pins :
- 4
- Fall Time (Typ) :
- 17 ns
- Published :
- 2016
- Rds On Max :
- 1.2 Ω
- FET Type :
- P-Channel
- Drain to Source Breakdown Voltage :
- -100V
- Package / Case :
- TO-261-4, TO-261AA
- Gate Charge (Qg) (Max) @ Vgs :
- 8.7nC @ 10V
- Lead Free :
- Contains Lead
- Rise Time :
- 27ns
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 100V
- Turn-Off Delay Time :
- 15 ns
- Current Rating :
- -1.1A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 6.7mm
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 660mA, 10V
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 1.1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Datasheets
- IRFL9110TR

P-Channel Tape & Reel (TR) 1.2Ohm @ 660mA, 10V ±20V 200pF @ 25V 8.7nC @ 10V 100V TO-261-4, TO-261AA
IRFL9110TR Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 200pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.1A.With a drain-source breakdown voltage of -100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 1.2Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFL9110TR Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 1.2Ohm
a 100V drain to source voltage (Vdss)
IRFL9110TR Applications
There are a lot of Vishay Siliconix
IRFL9110TR applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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