IRFL9110TR

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Mfr.Part #
IRFL9110TR
Manufacturer
Vishay
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET P-CH 100V 1.1A SOT223
Stock
85,209
In Stock :
85,209

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Voltage - Rated DC :
-100V
Supplier Device Package :
SOT-223
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 25V
Input Capacitance :
200pF
Drain to Source Resistance :
1.2Ohm
Width :
3.7mm
Max Operating Temperature :
150°C
Current - Continuous Drain (Id) @ 25°C :
1.1A Tc
Weight :
250.212891mg
Power Dissipation :
2W
Height :
1.45mm
Min Operating Temperature :
-55°C
Turn On Delay Time :
10 ns
Power Dissipation-Max :
2W Ta 3.1W Tc
Number of Pins :
4
Fall Time (Typ) :
17 ns
Published :
2016
Rds On Max :
1.2 Ω
FET Type :
P-Channel
Drain to Source Breakdown Voltage :
-100V
Package / Case :
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs :
8.7nC @ 10V
Lead Free :
Contains Lead
Rise Time :
27ns
RoHS Status :
Non-RoHS Compliant
Drain to Source Voltage (Vdss) :
100V
Turn-Off Delay Time :
15 ns
Current Rating :
-1.1A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Length :
6.7mm
Rds On (Max) @ Id, Vgs :
1.2Ohm @ 660mA, 10V
Vgs (Max) :
±20V
Number of Elements :
1
Number of Channels :
1
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
1.1A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Datasheets
IRFL9110TR
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFL9110TR from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, IRFL9110TR pinout, IRFL9110TR datasheet PDF, IRFL9110TR amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFL9110TR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFL9110TR


P-Channel Tape & Reel (TR) 1.2Ohm @ 660mA, 10V ±20V 200pF @ 25V 8.7nC @ 10V 100V TO-261-4, TO-261AA

IRFL9110TR Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 200pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.1A.With a drain-source breakdown voltage of -100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 1.2Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFL9110TR Features


a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 1.2Ohm
a 100V drain to source voltage (Vdss)


IRFL9110TR Applications


There are a lot of Vishay Siliconix
IRFL9110TR applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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