IRFL014
- Mfr.Part #
- IRFL014
- Manufacturer
- Vishay
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 2.7A SOT223
- Stock
- 16,847
- In Stock :
- 16,847
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 2W Ta 3.1W Tc
- Package / Case :
- TO-261-4, TO-261AA
- Drain to Source Resistance :
- 200mOhm
- Rds On Max :
- 200 mΩ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Breakdown Voltage :
- 60V
- Continuous Drain Current (ID) :
- 2.7A
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Published :
- 2011
- Supplier Device Package :
- SOT-223
- Mounting Type :
- Surface Mount
- Current Rating :
- 2.7A
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Number of Pins :
- 4
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 1.6A, 10V
- Power Dissipation :
- 2W
- Drain to Source Voltage (Vdss) :
- 60V
- Voltage - Rated DC :
- 60V
- Lead Free :
- Contains Lead
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 19 ns
- Rise Time :
- 50ns
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Input Capacitance :
- 300pF
- Turn-Off Delay Time :
- 13 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRFL014

N-Channel Tube 200mOhm @ 1.6A, 10V ±20V 300pF @ 25V 11nC @ 10V 60V TO-261-4, TO-261AA
IRFL014 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 2.7A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 13 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 200mOhm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFL014 Features
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRFL014 Applications
There are a lot of Vishay Siliconix
IRFL014 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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