IRFL014

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Mfr.Part #
IRFL014
Manufacturer
Vishay
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 60V 2.7A SOT223
Stock
16,847
In Stock :
16,847

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
2W Ta 3.1W Tc
Package / Case :
TO-261-4, TO-261AA
Drain to Source Resistance :
200mOhm
Rds On Max :
200 mΩ
Vgs(th) (Max) @ Id :
4V @ 250µA
RoHS Status :
Non-RoHS Compliant
Drain to Source Breakdown Voltage :
60V
Continuous Drain Current (ID) :
2.7A
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
150°C
FET Type :
N-Channel
Published :
2011
Supplier Device Package :
SOT-223
Mounting Type :
Surface Mount
Current Rating :
2.7A
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
Number of Pins :
4
Rds On (Max) @ Id, Vgs :
200mOhm @ 1.6A, 10V
Power Dissipation :
2W
Drain to Source Voltage (Vdss) :
60V
Voltage - Rated DC :
60V
Lead Free :
Contains Lead
Min Operating Temperature :
-55°C
Fall Time (Typ) :
19 ns
Rise Time :
50ns
Current - Continuous Drain (Id) @ 25°C :
2.7A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Vgs (Max) :
±20V
Input Capacitance :
300pF
Turn-Off Delay Time :
13 ns
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Mount :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Datasheets
IRFL014
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFL014 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, IRFL014 pinout, IRFL014 datasheet PDF, IRFL014 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFL014 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFL014


N-Channel Tube 200mOhm @ 1.6A, 10V ±20V 300pF @ 25V 11nC @ 10V 60V TO-261-4, TO-261AA

IRFL014 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 2.7A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 13 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 200mOhm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFL014 Features


a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)


IRFL014 Applications


There are a lot of Vishay Siliconix
IRFL014 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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