IRFL024ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1W Ta

JESD-30 Code :

R-PDSO-G4

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

DS Breakdown Voltage-Min :

55V

Packaging :

Tube

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

55V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Published :

1999

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

5.1A

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

Rds On (Max) @ Id, Vgs :

57.5m Ω @ 3.1A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Terminal Position :

Dual

ECCN Code :

EAR99

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-261-4, TO-261AA

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Drain-source On Resistance-Max :

0.0575Ohm

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING