IRFL014NTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Power Dissipation-Max :

1W Ta

Transistor Element Material :

SILICON

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Recovery Time :

61 ns

Mount :

Surface Mount

Number of Pins :

3

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

55V

Turn On Delay Time :

6.6 ns

Number of Terminations :

4

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.9A, 10V

REACH SVHC :

No SVHC

JESD-30 Code :

R-PDSO-G4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

3.3 ns

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Package / Case :

TO-261-4, TO-261AA

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Height :

1.4478mm

Length :

6.6802mm

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Current Rating :

1.9A

Nominal Vgs :

4 V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1.9A

Threshold Voltage :

4V

Turn-Off Delay Time :

12 ns

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Power Dissipation :

2.1W

Drain Current-Max (Abs) (ID) :

2.7A

Rise Time :

7.1ns

ECCN Code :

EAR99

Published :

2004

Resistance :

160mOhm

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Width :

3.7mm

Voltage - Rated DC :

55V