IRFL024Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

55V

Case Connection :

DRAIN

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Surface Mount :

yes

Package / Case :

TO-261-4, TO-261AA

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G4

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Published :

1999

Vgs (Max) :

±20V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

57.5m Ω @ 3.1A, 10V

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Power Dissipation-Max :

1W Ta

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1