IRFL4315TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G4

Dual Supply Voltage :

150V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Number of Elements :

1

Radiation Hardening :

No

Max Junction Temperature (Tj) :

150°C

Power Dissipation :

2.8W

Operating Temperature :

-55°C~150°C TJ

Rise Time :

21ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

185m Ω @ 1.6A, 10V

Vgs (Max) :

±30V

Threshold Voltage :

5V

Drain to Source Breakdown Voltage :

150V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Nominal Vgs :

5 V

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

19 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Turn On Delay Time :

8.4 ns

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

4

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

Voltage - Rated DC :

150V

Length :

6.6802mm

Package / Case :

TO-261-4, TO-261AA

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

5V @ 250μA

Current Rating :

2.6A

Lead Free :

Contains Lead, Lead Free

Operating Mode :

ENHANCEMENT MODE

Published :

1999

Power Dissipation-Max :

2.8W Ta

Resistance :

185Ohm

Mount :

Surface Mount

Transistor Element Material :

SILICON

Turn-Off Delay Time :

20 ns

Width :

3.7mm

Case Connection :

DRAIN

Continuous Drain Current (ID) :

2.6A

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 25V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

FET Type :

N-Channel

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Height :

1.8mm