IRFL4310TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

20 ns

Vgs (Max) :

±20V

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

100V

Rise Time :

18ns

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

1.8mm

Max Junction Temperature (Tj) :

150°C

Min Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.6802mm

Current Rating :

1.6A

JESD-30 Code :

R-PDSO-G4

Published :

1999

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Threshold Voltage :

2V

Factory Lead Time :

12 Weeks

Power Dissipation :

2.1W

Power Dissipation-Max :

1W Ta

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.6A, 10V

Drain Current-Max (Abs) (ID) :

2.2A

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

FET Type :

N-Channel

Resistance :

200mOhm

Drain to Source Breakdown Voltage :

100V

Width :

3.7mm

JESD-609 Code :

e3

Package / Case :

TO-261-4, TO-261AA

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Number of Pins :

3

Continuous Drain Current (ID) :

1.6A

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Terminal Position :

Dual

Number of Terminations :

4

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Turn-Off Delay Time :

34 ns

Number of Elements :

1

Radiation Hardening :

No

Additional Feature :

High Reliability

Nominal Vgs :

4 V

Turn On Delay Time :

7.8 ns

Mount :

Surface Mount

Lead Free :

Lead Free

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Element Configuration :

Single

Recovery Time :

110 ns