IRFL210TR
- Mfr.Part #
- IRFL210TR
- Manufacturer
- Vishay
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 960MA SOT223
- Stock
- 21,638
- In Stock :
- 21,638
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 8.9 ns
- Drain to Source Resistance :
- 1.5Ohm
- Power Dissipation-Max :
- 2W Ta 3.1W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 960mA Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 960mA
- Voltage - Rated DC :
- 200V
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 580mA, 10V
- Vgs (Max) :
- ±20V
- Current Rating :
- 960mA
- Turn-Off Delay Time :
- 14 ns
- Height :
- 1.8mm
- Turn On Delay Time :
- 8.2 ns
- Power Dissipation :
- 2W
- Package / Case :
- TO-261-4, TO-261AA
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 17ns
- Published :
- 2016
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Channels :
- 1
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 4
- Width :
- 3.7mm
- Mount :
- Surface Mount
- Input Capacitance :
- 140pF
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 200V
- Supplier Device Package :
- SOT-223
- Length :
- 6.7mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 140pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Lead Free :
- Contains Lead
- Rds On Max :
- 1.5 Ω
- Weight :
- 250.212891mg
- Datasheets
- IRFL210TR

N-Channel Tape & Reel (TR) 1.5Ohm @ 580mA, 10V ±20V 140pF @ 25V 8.2nC @ 10V 200V TO-261-4, TO-261AA
IRFL210TR Overview
A device's maximum input capacitance is 140pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 960mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFL210TR Features
a continuous drain current (ID) of 960mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRFL210TR Applications
There are a lot of Vishay Siliconix
IRFL210TR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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