IRFL210

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Mfr.Part #
IRFL210
Manufacturer
Vishay
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 200V 960MA SOT223
Stock
8,431
In Stock :
8,431

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Published :
2016
Rds On (Max) @ Id, Vgs :
1.5Ohm @ 580mA, 10V
Rise Time :
17ns
Min Operating Temperature :
-55°C
Fall Time (Typ) :
8.9 ns
FET Type :
N-Channel
Drain to Source Resistance :
1.5Ohm
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
200V
Turn On Delay Time :
8.2 ns
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 25V
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-261-4, TO-261AA
Current - Continuous Drain (Id) @ 25°C :
960mA Tc
Rds On Max :
1.5 Ω
Turn-Off Delay Time :
14 ns
Supplier Device Package :
SOT-223
RoHS Status :
Non-RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs :
8.2nC @ 10V
Power Dissipation-Max :
2W Ta 3.1W Tc
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
960mA
Number of Pins :
4
Input Capacitance :
140pF
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
200V
Max Operating Temperature :
150°C
Vgs(th) (Max) @ Id :
4V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IRFL210
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFL210 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, Number of Pins:4, Mounting Type:Surface Mount, IRFL210 pinout, IRFL210 datasheet PDF, IRFL210 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFL210 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFL210


N-Channel Tube 1.5Ohm @ 580mA, 10V ±20V 140pF @ 25V 8.2nC @ 10V 200V TO-261-4, TO-261AA

IRFL210 Overview


The maximum input capacitance of this device is 140pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 960mA.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 14 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.5Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8.2 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFL210 Features


a continuous drain current (ID) of 960mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)


IRFL210 Applications


There are a lot of Vishay Siliconix
IRFL210 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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