IRFL110TR
- Mfr.Part #
- IRFL110TR
- Manufacturer
- Vishay
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 1.5A SOT223
- Stock
- 124,574
- In Stock :
- 124,574
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 6.7mm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 2W Ta 3.1W Tc
- Packaging :
- Tape and Reel (TR)
- Drain to Source Resistance :
- 540mOhm
- Rds On (Max) @ Id, Vgs :
- 540mOhm @ 900mA, 10V
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-261-4, TO-261AA
- Number of Channels :
- 1
- Drain to Source Voltage (Vdss) :
- 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.3nC @ 10V
- Weight :
- 250.212891mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 6.9 ns
- Voltage - Rated DC :
- 100V
- Turn-Off Delay Time :
- 15 ns
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Number of Pins :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Operating Temperature :
- 150°C
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Published :
- 2012
- Rds On Max :
- 540 mΩ
- Drain to Source Breakdown Voltage :
- 100V
- Current Rating :
- 1.5A
- Supplier Device Package :
- SOT-223
- Height :
- 1.8mm
- Min Operating Temperature :
- -55°C
- Input Capacitance :
- 180pF
- Continuous Drain Current (ID) :
- 1.5A
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 9.4 ns
- Mounting Type :
- Surface Mount
- Rise Time :
- 16ns
- Width :
- 3.7mm
- Lead Free :
- Contains Lead
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 25V
- Datasheets
- IRFL110TR

N-Channel Tape & Reel (TR) 540mOhm @ 900mA, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-261-4, TO-261AA
IRFL110TR Overview
A device's maximal input capacitance is 180pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 540mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFL110TR Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRFL110TR Applications
There are a lot of Vishay Siliconix
IRFL110TR applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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