IRFL1006PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

60V

Power Dissipation :

2.1W

Mount :

Surface Mount

Threshold Voltage :

4V

Resistance :

220Ohm

Published :

1999

Supplier Device Package :

SOT-223

Continuous Drain Current (ID) :

1.6A

Package / Case :

TO-261-4, TO-261AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

220 mΩ

Gate to Source Voltage (Vgs) :

20V

Current Rating :

1.6A

Series :

HEXFET®

Drain to Source Breakdown Voltage :

60V

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Vgs (Max) :

±20V

Input Capacitance :

160pF

Nominal Vgs :

4 V

Dual Supply Voltage :

60V

Rise Time :

18ns

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tube

Number of Pins :

3

Mounting Type :

Surface Mount

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

FET Type :

N-Channel

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

220mOhm @ 1.6A, 10V

Power Dissipation-Max :

1W Ta