IRFL024ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead, Lead Free

JESD-30 Code :

R-PDSO-G4

Mounting Type :

Surface Mount

Radiation Hardening :

No

Nominal Vgs :

4 V

REACH SVHC :

No SVHC

Voltage - Rated DC :

55V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Series :

HEXFET®

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Factory Lead Time :

12 Weeks

Number of Pins :

3

Dual Supply Voltage :

55V

Vgs (Max) :

±20V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

6.6802mm

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

1.4478mm

Drain to Source Breakdown Voltage :

55V

Resistance :

57.5MOhm

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-261-4, TO-261AA

Width :

3.7mm

Number of Terminations :

4

Current Rating :

1A

Turn-Off Delay Time :

30 ns

Terminal Position :

Dual

Element Configuration :

Single

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

57.5m Ω @ 3.1A, 10V

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Threshold Voltage :

4V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1W Ta

Fall Time (Typ) :

23 ns

Published :

2010

Rise Time :

21ns

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

5.1A

Power Dissipation :

2.8W

Turn On Delay Time :

7.8 ns