IRFHS8342TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Published :

2010

Rds On (Max) @ Id, Vgs :

16m Ω @ 8.5A, 10V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

Nominal Vgs :

1.8 V

Power Dissipation-Max :

2.1W Ta

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2.1W

Lead Free :

Lead Free

Package / Case :

6-PowerVDFN

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

8.8A

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta 19A Tc

Rise Time :

15ns

Fall Time (Typ) :

5 ns

Number of Pins :

6

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Resistance :

16mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

5.9 ns

Drain Current-Max (Abs) (ID) :

8.5A

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Mount :

Surface Mount

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1.8V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Turn-Off Delay Time :

5.2 ns

FET Type :

N-Channel

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Factory Lead Time :

12 Weeks