IRFHS8342TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Recovery Time :

17 ns

Nominal Vgs :

1.8 V

Rds On Max :

16 mΩ

Supplier Device Package :

PG-TSDSON-6

Radiation Hardening :

No

Package / Case :

6-PowerVDFN

Number of Pins :

6

Continuous Drain Current (ID) :

8.8A

Length :

2.1mm

Input Capacitance :

600pF

FET Type :

N-Channel

Drain to Source Resistance :

16mOhm

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Drain to Source Voltage (Vdss) :

30V

Series :

HEXFET®

Height :

950μm

Packaging :

Digi-Reel®

Published :

2010

RoHS Status :

RoHS Compliant

Turn On Delay Time :

5.9 ns

Fall Time (Typ) :

5 ns

Rise Time :

15ns

Max Power Dissipation :

2.1W

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Power Dissipation :

2.1W

Width :

2.1mm

Threshold Voltage :

1.8V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150°C

REACH SVHC :

No SVHC

Turn-Off Delay Time :

5.2 ns

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta 19A Tc

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 10V

Rds On (Max) @ Id, Vgs :

16mOhm @ 8.5A, 10V