IRFHS8342TR2PBF
- Mfr.Part #
- IRFHS8342TR2PBF
- Manufacturer
- International Rectifier
- Package / Case
- 6-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.8A/19A TSDSON
- Stock
- 15,699
- In Stock :
- 15,699
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 950μm
- Fall Time (Typ) :
- 5 ns
- Turn On Delay Time :
- 5.9 ns
- Turn-Off Delay Time :
- 5.2 ns
- Length :
- 2.1mm
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Supplier Device Package :
- PG-TSDSON-6
- Recovery Time :
- 17 ns
- Threshold Voltage :
- 1.8V
- Current - Continuous Drain (Id) @ 25°C :
- 8.8A Ta 19A Tc
- Power Dissipation :
- 2.1W
- Mounting Type :
- Surface Mount
- Rds On Max :
- 16 mΩ
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 2.35V @ 25µA
- Width :
- 2.1mm
- FET Type :
- N-Channel
- Rise Time :
- 15ns
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 8.7nC @ 10V
- Published :
- 2010
- Input Capacitance (Ciss) (Max) @ Vds :
- 600pF @ 25V
- Number of Elements :
- 1
- Max Operating Temperature :
- 150°C
- Drain to Source Resistance :
- 16mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 30V
- Input Capacitance :
- 600pF
- Package / Case :
- 6-PowerVDFN
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Digi-Reel®
- Drain to Source Voltage (Vdss) :
- 30V
- Max Power Dissipation :
- 2.1W
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 8.8A
- Number of Pins :
- 6
- Mount :
- Surface Mount
- Series :
- HEXFET®
- Rds On (Max) @ Id, Vgs :
- 16mOhm @ 8.5A, 10V
- Nominal Vgs :
- 1.8 V
- Datasheets
- IRFHS8342TR2PBF

N-Channel Digi-Reel® 16mOhm @ 8.5A, 10V 600pF @ 25V 8.7nC @ 10V 30V 6-PowerVDFN
IRFHS8342TR2PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.8A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [5.2 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 16mOhm.A turn-on delay time of 5.9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.8V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).
IRFHS8342TR2PBF Features
a continuous drain current (ID) of 8.8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 5.2 ns
single MOSFETs transistor is 16mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRFHS8342TR2PBF Applications
There are a lot of Infineon Technologies
IRFHS8342TR2PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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