IRFHS8242TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Width :

2.1mm

RoHS Status :

RoHS Compliant

Nominal Vgs :

1.8 V

Published :

2013

Drain to Source Voltage (Vdss) :

25V

Max Power Dissipation :

2.1W

Gate to Source Voltage (Vgs) :

20V

Height :

950μm

Input Capacitance :

653pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Rise Time :

19ns

Packaging :

Cut Tape (CT)

Package / Case :

6-PowerVDFN

Recovery Time :

17 ns

Drain to Source Resistance :

13mOhm

Element Configuration :

Single

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

9.9A Ta 21A Tc

Gate Charge (Qg) (Max) @ Vgs :

10.4nC @ 10V

Supplier Device Package :

6-PQFN (2x2)

Number of Pins :

6

Power Dissipation :

2.1W

Series :

HEXFET®

Fall Time (Typ) :

5.3 ns

Drain to Source Breakdown Voltage :

25V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Turn-Off Delay Time :

5.4 ns

Turn On Delay Time :

6.5 ns

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

13mOhm @ 8.5A, 10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

653pF @ 10V

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

9.9A

Length :

2.1mm

Rds On Max :

13 mΩ