IRFHM9391TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Number of Pins :

8

Published :

2013

Threshold Voltage :

-1.8V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

11A

Number of Channels :

1

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1543pF @ 25V

Drain-source On Resistance-Max :

0.0225Ohm

Pulsed Drain Current-Max (IDM) :

90A

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Vgs (Max) :

±25V

Series :

HEXFET®

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerTDFN

Factory Lead Time :

10 Weeks

Radiation Hardening :

No

Fall Time (Typ) :

60 ns

Vgs(th) (Max) @ Id :

2.4V @ 25μA

FET Type :

P-Channel

Turn-Off Delay Time :

72 ns

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.6W Ta

Number of Terminations :

5

Avalanche Energy Rating (Eas) :

75 mJ

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

25V

Power Dissipation :

2.6W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

27ns

Drain to Source Breakdown Voltage :

-30V

Rds On (Max) @ Id, Vgs :

14.6m Ω @ 11A, 10V

Case Connection :

DRAIN

Terminal Position :

Dual

Turn On Delay Time :

11 ns

JESD-30 Code :

S-PDSO-F5

Number of Elements :

1

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE