IRFHM9331TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

-11A

FET Type :

P-Channel

Power Dissipation :

2.8W

Gate to Source Voltage (Vgs) :

25V

Number of Channels :

1

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

24A

Rise Time :

27ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

10m Ω @ 11A, 20V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

Resistance :

14.6mOhm

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

76 mJ

REACH SVHC :

No SVHC

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

11A Ta 24A Tc

Number of Elements :

1

Turn-Off Delay Time :

72 ns

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

1543pF @ 25V

Turn On Delay Time :

11 ns

Width :

2.9972mm

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-30V

Factory Lead Time :

12 Weeks

Max Junction Temperature (Tj) :

150°C

Power Dissipation-Max :

2.8W Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V 20V

JESD-30 Code :

S-PDSO-N5

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Package / Case :

8-PowerTDFN

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Threshold Voltage :

-1.8V

Length :

2.9972mm

Fall Time (Typ) :

60 ns

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Height :

1mm

Vgs (Max) :

±25V

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

90A

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®