IRFHM9331TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

10 MΩ

Min Operating Temperature :

-55°C

Width :

2.9972mm

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Input Capacitance :

1.543nF

Current - Continuous Drain (Id) @ 25°C :

11A Ta 24A Tc

Rise Time :

27ns

Length :

2.9972mm

Rds On (Max) @ Id, Vgs :

10mOhm @ 11A, 20V

Power Dissipation :

2.8W

FET Type :

P-Channel

Number of Elements :

1

Threshold Voltage :

-1.8V

Supplier Device Package :

PQFN (3x3)

Number of Pins :

8

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

25V

Series :

HEXFET®

Max Power Dissipation :

2.8W

Height :

939.8μm

Fall Time (Typ) :

60 ns

Continuous Drain Current (ID) :

-11A

Turn On Delay Time :

11 ns

Turn-Off Delay Time :

72 ns

Drain to Source Resistance :

14.6mOhm

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

30V

Nominal Vgs :

-1.8 V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1543pF @ 25V

Published :

2011

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Package / Case :

8-PowerTDFN

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Recovery Time :

96 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-30V