IRFHM8342TRPBF
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- Mfr.Part #
- IRFHM8342TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10A 8PQFN
- Stock
- 1,341
- In Stock ：
- 1,341
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 30V
- Continuous Drain Current (ID) :
- 10A
- Factory Lead Time :
- 10 Weeks
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 8.1 ns
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 17A, 10V
- JESD-30 Code :
- S-PDSO-F5
- Threshold Voltage :
- 1.8V
- Turn-Off Delay Time :
- 7.6 ns
- Series :
- HEXFET®
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 5
- Number of Pins :
- 8
- Vgs(th) (Max) @ Id :
- 2.35V @ 25µA
- Rise Time :
- 30ns
- Published :
- 2013
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 560pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- Package / Case :
- 8-PowerTDFN
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 2.6W Ta 20W Tc
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 5.6 ns
- Terminal Form :
- Flat
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 4.5V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 30V
- Drain Current-Max (Abs) (ID) :
- 20A
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 13mOhm
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- IRFHM8342TRPBF
N-Channel Tape & Reel (TR) 16m Ω @ 17A, 10V ±20V 560pF @ 25V 7.5nC @ 4.5V 30V 8-PowerTDFN
IRFHM8342TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 560pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 20A.When the device is turned off, a turn-off delay time of 7.6 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.1 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1.8V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRFHM8342TRPBF Features
a continuous drain current (ID) of 10A
the turn-off delay time is 7.6 ns
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRFHM8342TRPBF Applications
There are a lot of Infineon Technologies
IRFHM8342TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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