IRFHM8337TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

FET Type :

N-Channel

Mount :

Surface Mount

Number of Pins :

8

Turn On Delay Time :

9 ns

Drain to Source Breakdown Voltage :

30V

Published :

2013

Threshold Voltage :

1.8V

Terminal Position :

Dual

Radiation Hardening :

No

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Number of Elements :

1

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Drain Current-Max (Abs) (ID) :

35A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 4.5V

Turn-Off Delay Time :

9.9 ns

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

12A

Resistance :

9.4mOhm

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Power Dissipation-Max :

2.8W Ta 25W Tc

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Number of Terminations :

5

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

94A

Factory Lead Time :

17 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

11ns

Fall Time (Typ) :

5.6 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

S-PDSO-F5

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

12.4m Ω @ 12A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

755pF @ 15V