IRFHM8334TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Fall Time (Typ) :

4.6 ns

DS Breakdown Voltage-Min :

30V

Number of Terminations :

5

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Power Dissipation-Max :

2.7W Ta 28W Tc

Mount :

Surface Mount

Case Connection :

DRAIN

Turn-Off Delay Time :

7 ns

Terminal Position :

Dual

Power Dissipation :

2.7W

Rise Time :

14ns

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Turn On Delay Time :

8.3 ns

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Vgs (Max) :

±20V

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

25A

Factory Lead Time :

17 Weeks

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Terminal Form :

Flat

Number of Channels :

1

JESD-30 Code :

S-PDSO-F5

Package / Case :

8-PowerTDFN

Number of Pins :

8

Continuous Drain Current (ID) :

13A

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

9m Ω @ 20A, 10V

Published :

2013

Mounting Type :

Surface Mount

Threshold Voltage :

1.8V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.009Ohm

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

35 mJ