IRFHM8334TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Transistor Application :

SWITCHING

Threshold Voltage :

1.8V

Vgs (Max) :

±20V

Rise Time :

14ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

7 ns

Terminal Position :

Dual

JESD-30 Code :

S-PDSO-F5

Power Dissipation :

2.7W

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

9m Ω @ 20A, 10V

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Fall Time (Typ) :

4.6 ns

Drain Current-Max (Abs) (ID) :

25A

Power Dissipation-Max :

2.7W Ta 28W Tc

Transistor Element Material :

SILICON

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

REACH SVHC :

No SVHC

Factory Lead Time :

17 Weeks

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Turn On Delay Time :

8.3 ns

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.009Ohm

Avalanche Energy Rating (Eas) :

35 mJ

Lead Free :

Lead Free

Number of Pins :

8

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Continuous Drain Current (ID) :

13A

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Mount :

Surface Mount