IRFHM831TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Terminal Position :

Dual

Resistance :

12.6mOhm

Nominal Vgs :

1.8 V

Continuous Drain Current (ID) :

14A

Case Connection :

DRAIN

Rise Time :

12ns

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

40A

Length :

3.2766mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

6.2 ns

Avalanche Energy Rating (Eas) :

50 mJ

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 12A, 10V

Width :

3.3mm

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.5W Ta 27W Tc

Threshold Voltage :

1.8V

JESD-30 Code :

S-PDSO-N5

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

14A Ta 40A Tc

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Number of Elements :

1

Number of Terminations :

5

Lead Free :

Lead Free

Power Dissipation :

2.5W

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

13 Weeks

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Element Configuration :

Single

Package / Case :

8-PowerTDFN

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

96A

Turn On Delay Time :

6.9 ns

Height :

990.6μm

Mount :

Surface Mount

Fall Time (Typ) :

4.7 ns

RoHS Status :

RoHS Compliant