IRFHM830TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

2155pF @ 25V

Recovery Time :

26 ns

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

9.2 ns

Mount :

Surface Mount

Length :

3.2766mm

Packaging :

Cut Tape (CT)

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Package / Case :

8-VQFN Exposed Pad

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 20A, 10V

Lead Free :

Lead Free

Number of Pins :

8

Height :

990.6μm

Nominal Vgs :

1.8 V

Continuous Drain Current (ID) :

21A

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Max Power Dissipation :

2.7W

Drain to Source Breakdown Voltage :

30V

Published :

2005

Rise Time :

25ns

Radiation Hardening :

No

ECCN Code :

EAR99

Turn-Off Delay Time :

13 ns

Number of Elements :

1

Turn On Delay Time :

12 ns

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Width :

3.3mm

Threshold Voltage :

1.8V

Min Operating Temperature :

-55°C

Power Dissipation :

37W

Current - Continuous Drain (Id) @ 25°C :

21A Ta 40A Tc